{"subject":"Shallow Si RIE","detailContent":"
\r\n
\"Silicon
\r\n\r\n
\r\n
\r\n
    \r\n\t
  • Shallow Si RIE
    \r\n\tBrand Model: Gigalane Maxis 200L
    • \r\n\t
  • Instrument expert: Prof. Chen, Kuan-Neng
    \r\n\t03-5712121 ext 31558
    \r\n\tEmail knchen@nycu.edu.tw
    • \r\n\t
  • Equipment management personnel: Mr. Hu, Jack
    \r\n\t03-5712121 ext 55607, 55666
    \r\n\tEmail jackhu@nycu.edu.tw
    • \r\n\t
  • Equipment management personnel: Mr. Lee, James
    \r\n\t03-5712121 ext 55660, 55666
    \r\n\tEmail cwlee@nycu.edu.tw
    • \r\n\t
  • Instrument location: Laboratory 127, 1st Floor, Solid State Electronic Systems Building, Guanfu Campus
    • \r\n
\r\n
\r\n
\r\n
","dataClassName":"Nanofabrication","pubUnitName":"Instrumentation Resource Center ","posterDate":null,"updateDate":"2026-05-21","liaisonper":null,"liaisontel":null,"liaisonfax":null,"liaisonemail":null,"languageurl":null,"page1Title":"Instrument introduction","page1":"

Nano Facility Center
\r\n
\r\nInstrument Information

\r\n\r\n
    \r\n\t
  1. Brand Model: Gigalane Maxis 200L
    2. \r\n\t
  2. Purchase period: January 2022
    3. \r\n\t
  3. Place of placement: Laboratory 127, 1st Floor, Solid State Electronic Systems Building, Guanfu Campus (TEL: 55616)
    4. \r\n\t
  4. Function: dry etching, high selectivity silicon shallow etching (Si/SiO2)
    5. \r\n\t
  5. Important Specifications: The gas used contains HBr, Cl2、CF4, Ar, O2, cooled by He gas system, mainly 4″ wafer
    6. \r\n\t
  6. The instrument can be used with special process material
    7. \r\n
\r\n\r\n

 

","page2Title":"Precautions","page2":"
\r\n
Precautions
\r\n\r\n
    \r\n\t
  1. Please specify the material of the base wafer, what kind of substances (such as SiO2, photoresist, etc.) are contained on it, and whether to remove the photoresist after etching (an additional Wet Bench application form is required).
    2. \r\n\t
  2. Front-end chips.
    3. \r\n
\r\n
","page3Title":"Do-it-yourself regulations","page3":"
\r\n
Do-it-yourself regulations
\r\n\r\n
    \r\n\t
  1. Instructions for obtaining the permission to use the instrument:\r\n\t\r\n\t
    2. \r\n\t
  2. Instrument opening level and number of people.
    3. \r\n\t
  3. After you have the permission to use the instrument, you need to log in to the following system to obtain the serial number and make an appointment for use:
    4. \r\n\t
  4. NSTC Basic Research Core Facility Reservation Service Management system (obtain serial number)
    5. \r\n\t
  5. Nano Center Instrument Reservation System(Reservation for use time slot)
    6. \r\n
\r\n
","page4Title":"Delegated Operation Regulations","page4":"
\r\n
Commissioning the operation of the instrument
\r\n\r\n
    \r\n\t
  1. If there is an NSTC project, please go to the NSTC Basic Research Core Facility Reservation Service Management system (https://vir.nstc.gov.tw/home/Index). Make reservations and obtain the reservation number, then download the RIE-commissioned OEM application form. Submit the completed application form and materials to the Nano Facility Center(2F, solid-state electronic system building of our school) to assist the management personnel of each instrument in scheduling OEM.
    2. \r\n\t
  2. For those without an NSTC project, please download the RIE-commissioned OEM application form. Submit the completed application form and materials to the Nano Facility Center(2F, solid-state electronic system building of our school) to assist the management personnel of each instrument in scheduling OEM.
    3. \r\n
\r\n
","page5Title":"Charges","page5":"
\r\n
Charge information
\r\n\r\n
    \r\n\t
  1. Those with an accountant from the National Science Council will be priced according to the plan payment standard, and those without an accountant from the National Science Council will be priced according to the non-plan payment standard.
    2. \r\n\t
  2. Payment method:\r\n\t
      \r\n\t\t
    • Do it yourself: charge a fee
      • \r\n\t\t
    • Entrusted operation: charging usage fee + OEM fee
      • \r\n\t
    \r\n\t
    3. \r\n\t
  3. Cost inquiry link：https://vir.nstc.gov.tw/VI_SearchResult?item=1
    4. \r\n
\r\n
","page6Title":null,"page6":null,"page7Title":null,"page7":null,"page8Title":null,"page8":null,"docs":[],"images":[{"fileurl":"https://ord.nycu.edu.tw/ord/en/app/machine/image?module=corefacilities&detailNo=1168750751141335040&init=Y","expFile":"Silicon shallow etching system"}],"videos":[],"audios":[],"resources":[{"relateURL":"https://ord.nycu.edu.tw/ord/en/app/machine/list?module=corefacilities&id=1990","relateName":"List of Instruments"},{"relateURL":"https://ord.nycu.edu.tw/ord/en/app/machine/list?module=corefacilities&id=1992","relateName":"Basic Service-Nanofabrication"},{"relateURL":"https://ord.nycu.edu.tw/ord/en/app/machine/view?module=corefacilities&id=1990&serno=808d86c1-e68b-4c05-93cd-0a4b85ed637b","relateName":"Si Deep-RIE"},{"relateURL":"https://ord.nycu.edu.tw/ord/en/app/machine/view?module=corefacilities&id=1990&serno=27dd564a-8602-4dbb-8056-22d5c1c20815","relateName":"High Density Plasma Active Ion Etching System"}]}